Optoelectronic properties of nanostructured Si prepared at low temperature by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)

Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type sili- con wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crys- talline volume fraction (X c ) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum con- finement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X c .