Article
العنوان التاريخ
Electric Properties of Dielectric Materials at Intermediate Frequencies
Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs
Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing
Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon-plasmon coupling regime
Influence of electron scattering on phonon-plasmon coupled modes dispersion and free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths
Optical interactions in the InSe/CdSe interface
Conference Paper
العنوان التاريخ
Longitudinal optical phonon-plasmon interaction in Ga-group V compounds for IR and THz applications
Theoretical triangular quantum well model for AlGaN/GaN HEMT structure used as polar liquid sensor
GaAs-based grating system for Q-switching on the basis of IMOS structure
Reflectivity modulator based on GaSb/GaAs heterostructure
Book
العنوان التاريخ
GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization