Design and Characterization of Yb/p-SiO2/(Yb, In) Thin-film Transistors for 5G Resonators

Authors:

A. F. Qasrawi

H. K. Khanfar

S. R. Alyat

ISSN:

1678-4448

Journal Name:

Brazilian Journal of Physics

Volume:

52

Issue:

2

Pages From:

37

To:

44

Date:

الخميس, يناير 20, 2022

External Link:

https://doi.org/10.1007/s13538-022-01058-y