Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon-plasmon coupling regime

Authors:

G.Shkerdin

S. Rabbaa

J. Stiens

R. Vounckx

Journal Name:

Journal of Physics D- Applied physics

Volume:

45

Issue:

49

Pages From:

495103

To:

495115

Date:

الجمعة, نوفمبر 9, 2012

External Link:

http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495103/meta