Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K

Authors:

I. Alawneh, E. Simoen, S. Biesemenms, K. De Meyer and C. Claeys

Journal Name:

Journal de Physique IV

Volume:

8

Issue:

1998

Pages From:

3

To:

3

Date:

الأربعاء, يوليو 8, 1998