Influence of the deposition rate of the a-Si:H channel of the field-effect mobility of TFTs deposited in VHF glow discharge

Authors: 
H. Meiling, J.F.M. Westendorp, J. Hautala, Z. M. Saleh, and C.T. Malone
ISSN: 
000-000
Journal Name: 
Proc. of the Materials Research Society
Volume: 
10
Issue: 
5
Pages From: 
1
To: 
5
Date: 
Saturday, January 1, 1994