Influence of the deposition rate of the a-Si:H channel of the field-effect mobility of TFTs deposited in VHF glow discharge

Authors:

H. Meiling, J.F.M. Westendorp, J. Hautala, Z. M. Saleh, and C.T. Malone

ISSN:

000-000

Journal Name:

Proc. of the Materials Research Society

Volume:

10

Issue:

5

Pages From:

1

To:

5

Date:

Saturday, January 1, 1994