Turkish Journal of Physics
Monday, October 7, 2013
Photoconductivity, photovoltaics, nanocrystalline silicon, recombination
The photoconductivity dependences on temperature and illumination intensity were investigated for thin ﬁlms of hydrogenated nanocrystalline silicon (nc-Si:H) grown by very-high-frequency, plasma-enhanced chemical vapor deposition. The nanocrystalline phase was achieved by heavy hydrogen dilution of silane (SiH 4 ). We ﬁnd that the activation energy of the photoconductivity is sensitive to the incident illumination intensity for illumination intensities below 6 mW/cm 2 . The photocurrent follows a power-law dependence on illumination intensity (I ph / F γ ), with γ ranging from 0.36 to 0.83. The illumination dependence of the photocurrent suggests 2 diﬀerent recombination mechanisms depending on temperature. In the lower temperature regime (300–340 K), recombination appears to be dominated by a linear (monomolecular) process, while at higher temperatures (350–400 K), it is likely dominated by a sublinear (bimolecular) process.