Influence of the deposition rate of the a-Si:H channel of the field-effect mobility of TFTs deposited in VHF glow discharge

Authors: 
H. Meiling, J.F.M. Westendorp, J. Hautala, Z. M. Saleh, and C.T. Malone
Conference: 
Proc. of the Materials Research Society
Proceeding Volume: 
1994
Location: 
San Francisco, USA
Date: 
Friday, April 1, 1994