Journal Name:
SOLID STATE COMMUNICATIONS
Volume:
142
Issue:
10
Pages From:
566
To:
568
Date:
Friday, June 1, 2007
Keywords:
semiconductors; crystal growth; X-ray scattering; optical properties
Abstract:
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. (C) 2007 Elsevier Ltd. All rights reserved.