Journal Name:
Plasmonics
Volume:
1
Issue:
1
Pages From:
1
To:
8
Date:
Tuesday, May 9, 2017
Abstract:
In this study, the effect of the nanosandwiched indium
slab thickness (20–200 nm) on the performance of the
Ga2S3/In/Ga2S3 interfaces is explored by means of X-ray diffraction,
Raman spectroscopy, and optical spectroscopy techniques.
The indium slab thickness which was varied in the
range of 20–200 nm is observed to enhance the visible light
absorbability of the Ga2S3 by 54.6 times, engineered the energy
band gap in the range of 3.7–1.4 eV and increases the
dielectric constant without, significantly, altering the structure
of the Ga2S3. The broad range of the band gap tunability and
the increased absorbability nominate the Ga2S3 thin films for
photovoltaic applications. In addition, the dielectric spectral
analysis and modeling have shown that a wide variety in the
plasmon resonant frequency could be established within the
Ga2S3/In/Ga2S3 trilayers. The plasmon frequency engineering
in the range of 0.56–2.08 GHz which is associated with drift
mobility of 12.58–5.76 cm2/Vs and electron scattering time at
femtosecond level are promising for the production of broad
band high frequency microwave filters.