ISSN:
1567-1739/
Journal Name:
Current Applied Physics
Volume:
19
Issue:
6
Pages From:
639
To:
645
Date:
Sunday, March 3, 2019
Abstract:
In this study we have explored some of the properties of Yb/MoO3/(C, Yb) thin films as a multifunctional optoelectronic
device. While the MoO3 films which are deposited onto glass substrate are found to be of amorphous
nature, the Yb metal induced the growth of orthorhombic phase of MoO3. The films are high transparent and
exhibit energy band gap value of 3.0eV which make it sensitive to light signals in the near ultraviolet range
of light. In addition, the frequency dependent capacitance-voltage characteristics of Yb/MoO3/(C,Yb) structure
display pronounced accumulation, depletion and inversion regions that nominate it for use as tunable metal-oxide-
semiconductor MOS device. The physical parameters including the built in voltage, barrier height, flat band
and threshold voltages of the MOS capacitors are also determined. Furthermore, the current-voltage characteristics
displayed high rectification ratio that could reach 1.26×104 at biasing voltage of 0.5V nominating the
Yb/MoO3/C device for use as electronic switches. On the other hand, the impedance spectroscopy analysis in
the frequency domain of 0.01–1.80GHz, have shown that the Yb/MoO3/Yb structures are more appropriate for
microwave applications than Yb/MoO3/C device. The microwave cutoff frequency for the Yb sandwiched MoO3
exceeds 140GHz. The return loss for the Yb/MoO3/Yb reaches 26dBat 1.8GHz. These values are attractive as
they suit microwave low/high pass band filters.
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