Journal Name:
IEE Proceedings, Optoelectronics
Volume:
151
Issue:
3
Pages From:
143
To:
150
Date:
Tuesday, June 1, 2004
Keywords:
optical modulation; quantum dot lasers; indium compounds; gallium arsenide; distributed Bragg reflector lasers; III-V semiconductors
Abstract:
A detailed theoretical analysis of the high-speed characteristics of InAs/GaAs quantum dot lasers is presented. The modulation bandwidth, relative intensity noise (RIN) and induced carrier concentration chirp of a tunnelling injection laser and excited-state emitting DBR laser have been studied and compared with a conventional laser and cross-gain modulated laser. The study shows that the excited-state emitting DBR laser demonstrates higher modulation bandwidth and lower induced carrier concentration chirp than the tunnelling injection laser.
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