ISSN:
1584-8663
Journal Name:
Chalcogenide Letters
Volume:
20
Issue:
3
Pages From:
177
To:
186
Date:
Wednesday, March 1, 2023
Abstract:
Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO 2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features
of the Ge/SeO 2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillator.
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